• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A method for the examination of electrically active impurities of semiconductor materials or semiconductor structures which comprises the steps of providing a junction in a sample taken from the semiconductor to be tested, inserting the sample in a microwave field, providing a space charge layer in the junction by applying a reverse bias thereto, filling the electrically active defects of the space charge layer, examining the thermal emission process aiming at reaching a thermal equilibrium state that takes place following said filling step by measuring the change of the microwave field that takes place due to changes in the microwave absorption in the sample during the thermal emission process. The microwave field should be present at least during the examination of the transient of the microwave absorption. In a measuring arrangement for carrying out the method a sample (24) of the semiconductor comprises a junction, the sample is provided with a pair of electrical contacts, and the measuring arrangement comprises a biasing means (26) coupled to the contacts for reverse biasing the junction to provide a space charge layer therein, a means (26) for filling the electrically active defects in the layer during a predetermined period or periods, and transient detecting means (27) for detecting transient changes in the junction after termination of said periods, and the arrangement comprises furthermore a microwave generator (21), a microwave means (23) coupled to the generator which defines a microwave field, and the sample is arranged in the field of the microwave means with a contact coupled to earth, the transient detecting means is a microwave detector arranged to detect transient changes in the microwave absorption due to the changes in the junction.
    公开号:SU1669407A3
    申请号:SU874203877
    申请日:1987-11-16
    公开日:1991-08-07
    发明作者:Янч Вольфгант；Ференци Дьердь
    申请人:Мадьяр Тудоманьош Академиа Мюсаки Физикаи Кутато Интезет (Инопредприятие)；Др.Вольфганг Янч (Фирма)；
    IPC主号:
    专利说明:

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    four
    The invention relates to a method for detecting electrically active impurities (deep levels) in semiconductor materials.
    The purpose of the invention is to improve the accuracy of measurement and determination of various types of impurities.
    FIG. 1 shows a block diagram of a device implementing a method for determining electrically active impurities in semiconductor structures with a pn-junction; in fig. 2 - the second
    a variant of the device for implementing the method; in fig. 3 - the same, the third option; Fig. 4 shows an Arrhenius curve constructed on the basis of measurement results obtained using the device according to the second embodiment; figure 5 is a graphical representation of the results of isothermal. measurements with frequency scanning performed at four different temperatures using the device according to the third variant; in fig. 6 - curves arre-
     Sl4
    nnus corresponding to the measurement results shown in fig0.5
    A device that implements a method for determining electrically active impurities in semiconductor structures with a pn junction contains a microwave generator 1 stabilized in frequency and amplitude, circulator 2, microwave resonator 3 in which sample 4 is located, preferably at the point of maximum voltage. electrical field Sample 4 is made of the material under study. Sample 4 is equipped with two electrical connections, one of which is grounded and the other is connected to the pulse transmission line 5, which includes a circuit with lasovani complete resistance
    laziness. Line 5 of the transmission and installation inside the cavity 3 must be positioned so as not to be degraded.
    Carrier radiation from deep levels, which are the object of study, is periodically triggered by first filling these levels by using a short electrical pulse, which reduces the width of the spatial charge layer by reducing the reverse bias voltage in sample 4, with this pulse the free carriers fill up, as it were, in the layer of the spatial charge, and some of them are captured by deep levels. After the completion of the filling pulse, these trapped charge carriers are again emitted at the rate of radiation,
    25
    Q factor of the resonator 3 "In the cavity resonator 3, this is achieved by arranging wires or coaxial cables along the node line, in which the microwave electric field is zero.
    Line 5 transmission is connected to the generator 6 pulses. By adjusting the frequency and tuning the resonator 3, we minimize the energy reflected by the resonator 3, the reflection coefficient is measured with the help of the microwave detector 70 For any critical 35 that is characteristic of the used resonator, any change in the current or trap, polishing causes the formation of a finite reflection coefficient, which is proportional (in magnitude) to change
    After absorption of the microwave detector 7 to hy, i.e. absorption, the signal is amplified by selective amplification. In order to determine the emission rate, a switch 8 and a unit 9 for processing the measurement results are received. The unit 9 controls the operation of the generator 6, which, via the transmission line 5, supplies the sample j to the end of the filling pulse, uses an amplifier 8, which is designed to selectively amplify the detected signal with respect to the inevitable background generator 10, isolator 11, control - 0 interference, and through which we can increase the switch 12, the first and second sensitivity. Microwave bridges 13 and 14, first and second attenuators 15 and 16, circulator 17, resonator 18, control unit 19
    55
    Both capture and radiation change the number of free carriers in the sample, and hence the energy loss.
    which is the reciprocal of the time constant for the restoration of the microwave radiation ability of the pos4 pulses of the DC current offset,
    The device (Fig 2) contains the microwave phases, the detector 20, the first amplifier 21, the automatic frequency tuning unit 22, the second amplifier 23, the transmission line 24, the first pulse generator 25, the second oscillator 26
    Since the output pin of sample 4 is grounded, it is possible to realize both the correct impedance matching and the short transmission lines, and such a scheme makes it possible to use shorter excitation pulses, for example, 100 ps long.
    15
    ten
    6694074
    owl, signal processing unit 27, computer 28 and sample 29.
    The device (Fig. 3) contains a generator 5, a resonator 31, a microwave detector 32, a pulse generator 33, a preamplifier 34, a hold circuit 35, a synchronous detector 36, a computer 37, a temperature control unit 38. A microwave reflectometer can be used instead of the resonator. In this case, the sample is installed in the end part of the waveguide, and a reflector of the appropriate size is located at an adjustable interval.
    The device (Fig. 1) works as follows.
    Carrier radiation from deep levels, which are the object of study, is periodically triggered by first filling these levels by using a short electrical pulse, which reduces the width of the spatial charge layer by reducing the reverse bias voltage in sample 4, with this pulse the free carriers fill up, as it were, in the layer of the spatial charge, and some of them are captured by deep levels. After the completion of the filling pulse, these trapped charge carriers are again emitted at the rate of radiation,
    20
    25
    30 which is characteristic of the capture or trap used in this case,
    Gii, i.e. absorption To determine the emission rate, after the end of the filling pulse, an amplifier 8 is used, which is designed to selectively amplify the detected signal with respect to the inevitable background noise, and thereby it is possible to increase the sensitivity.
    Both capture and radiation change the number of free carriers in the sample, and hence the energy loss.
    Gii, i.e. absorption To determine the emission rate, after the end of the filling pulse, an amplifier 8 is used, which is designed to selectively amplify the detected signal with respect to the inevitable background noise, and thereby it is possible to increase the sensitivity.
    which is the reciprocal of the time constant to restore the microwave power, i.e. absorption To determine the emission rate, after the end of the filling pulse, an amplifier 8 is used, which is designed to selectively amplify the detected signal with respect to the inevitable background noise, and thereby it is possible to increase the sensitivity.
    Since the output pin of sample 4 is grounded, it is possible to realize both the correct impedance matching and the short transmission lines, and such a scheme makes it possible to use shorter excitation pulses, for example, 100 ps long.
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    权利要求:
    Claims (3)
    [1]
    Claim
    1. A method for determining electrically active impurities in semiconductor structures with an pn junction, which consists in applying a reverse bias to the sample to form a space charge layer in the pn junction, exciting it before filling electrically active impurities and terminating the excitation, measuring the process of charge carrier transition to a thermally equilibrium state in the presence of reverse bias and sample temperature, characterized in that, in order to improve the measurement accuracy, the transient is measured are measured by measuring the change in the absorption of the microwave field acting on the sample,
    [2]
    2, The method according to π, ^ characterized in that the operations are excited with each other at the location of the detector 32. If a change in absorption occurs in the sample, then the compensation effect becomes less effective and the detector 32 detects a change in the microwave level.
    30 transient measurements and measurements are periodically repeated,
    [3]
    3, Method pop, 2, characterized in that, in order to determine different types of impurities, change the frequency of repetition.
    FIG. 1
    Figure 2
    Fig.Z
    1669907
    FIG. 5
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    同族专利:
    公开号 | 公开日
    EP0260321A1|1988-03-23|
    US4839588A|1989-06-13|
    EP0260321B1|1990-12-19|
    CA1269762A|1990-05-29|
    WO1987005701A1|1987-09-24|
    HUT43735A|1987-11-30|
    JPH01500613A|1989-03-01|
    HU196262B|1988-10-28|
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    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    HU109686A|HU196262B|1986-03-17|1986-03-17|Method for testing electrically active impuritles in semiconductor materials and structures and measuring arrangement for implementing method|
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